product standards mos fet SK8403160L ? absolute maximum ratings ta = 25 ? c note *1 device mounted on a glass-epoxy board in figure 1 1. source 5. drain *2 pulse test: ensure that the channel temperature does not exceed 150 ? c 2. source 6. drain *3 vdd = 24 v, vgs = 10 to 0 v, l = 0.1 mh, tch = 25 ? c (initial) 3. source 7. drain 4. gate 8. drain page for load-switching / for dc-dc converter pin name operating ambient temperature topr -40 to +85 3. source 7. 1of6 unit : mm 1. source 5. drain 2. source drain 8. drain 6. drain ? SK8403160L silicon n-channel mos fet ? features ? ? halogen-free / rohs compliant panasonic hsso8-f1-b ? (eu rohs / ul-94 v-0 / msl : level 1 compliant) ? marking symbol : 16 code jeita symbol rating unit 4. gate ? packaging embossed type (thermo-compression sealing) : 3 000 pcs / reel (standard) drain to source voltage vds 30 v gate to source voltage vgs ? 20 low drain-source on-state resistance : rds(on) typ = 3.2 m ? (vgs = 4.5 v) parameter drain current ta = 25 ? c, t = 10 s *1 id 29 a ta = 25 ? c, dc *1 18 tc = 25 ? c 70 pulsed, tch < 150 ? c *2 87 total power dissipation ta = 25 ? c, dc *1 pd 2 w tc = 25 ? c 28 thermal resistance channel to ambient rth(ch-a) 62.5 ? c / w channel to case rth(ch-c) 4.5 tch 150 ? c storage temperature range tstg -55 to +150 internal connection avalanche energy (single pulse) *3 ear 26 mj avalanche current (single pulse) *3 iar 14.5 a channel temperature figure 1 fr4 glass-epoxy board 25.4 mm 25.4 mm 0.8 mm 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5 3.3 3.25 1.0 3.05 0.65 3.05 0.22 0.3 0.25 1234 5 6 7 8 d o c n o . t t4 - ea - 14485 r e v i sio n . 2 e s t a b li s h e d : 2013 - 01 - 07 r e v i s e d : 2013 - 05 - 31
product standards mos fet SK8403160L ? electrical characteristics ta = 25 ? c ? 3 ? c note 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. *1 measurement circuit for turn-on delay time / rise time / turn-off delay time / fall time page 2 of 6 static characteristics parameter symbol conditions min typ max unit drain-source breakdown voltage vdss id = 1 ma, vgs = 0 v 30 v ? a gate-source leakage current igss vgs = ? 16 v, vds = 0 v ? 10 ? a zero gate voltage drain current idss 10 vds = 30 v, vgs = 0 v gate-source threshold voltage vth id = 3.35 ma, vds = 10 v 1.3 drain-source on-state resistance rds(on)1 id = 14.5 a, vgs = 10 v 3 4.3 v 2.5 3.3 m ? dynamic characteristics parameter symbol conditions min typ max rds(on)2 id = 14.5 a, vgs = 4.5 v 3.2 unit input capacitance ciss vds = 10 v, vgs = 0 v f = 1 mhz 2 800 3 920 pf output capacitance coss 330 470 reverse transfer capacitance crss 230 370 ns rise time *1 tr 12 turn-on delay time *1 td(on) vdd = 15 v, vgs = 0 to 10 v id = 14.5 a 13 52 ns fall time *1 tf 8 turn-off delay time *1 td(off) vdd = 15 v, vgs = 10 to 0 v id = 14.5 a total gate charge qg vdd = 15 v, vgs = 0 to 4.5 v id = 14.5 a 22 nc gate to source charge qgs 7 gate to drain charge qgd 9 gate resistance rg f = 5 mhz 1.2 3 ? body diode characteristic parameter symbol conditions min typ max unit 0.8 1.2 v diode forward voltage vsd is = 14.5 a, vgs = 0 v d o c n o . t t4 - ea - 14485 r e v i sio n . 2 e s t a b li s h e d : 2013 - 01 - 07 r e v i s e d : 2013 - 05 - 31
product standards mos fet SK8403160L *1 measurement circuit for turn-on dela y time / rise time / turn-off dela y time / fall time page 3 of 6 10 % 90 % 90 % 10 % 90 % 10 % vin vout td(on) tr td(off) tf vin vout vin pw = 10 ? s d.c. ? 1 % d s g 4.7 ? vdd = 15 v id = 14.5 a 0 v 10 v d o c n o . t t4 - ea - 14485 r e v i sio n . 2 e s t a b li s h e d : 2013 - 01 - 07 r e v i s e d : 2013 - 05 - 31
product standards mos fet SK8403160L technical data ( reference ) page capacitance - vds id - vds id - vgs vds - vgs rds(on) - id dynamic input/output characteristics 4of6 0 0.05 0.1 0.15 0.2 0.25 0.3 0246810 gate-source voltage vgs (v) drain-source voltage vds (v) id = 14.5 a 7.25 a 3.62 a 1 10 100 110 drain current id (a) drain-source on-state resistance rds(on) (m ? ) vgs = 10 v 4.5 v 0 2 4 6 8 10 0 102030405060 total gate charge qg (nc) gate-source voltage vgs (v) vdd = 15 v 100 1000 10000 0.1 1 10 100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss 0 2 4 6 8 10 0 0.1 0.2 0.3 drain-source voltage vds (v) drain current id (a) vgs = 2.5 v 3.5 v 3 v 4.5 v 4 v 10 v 0 2 4 6 8 01234 gate-source voltage vgs(v) drain current id(a) 25 c ta = 100 c -40 c d o c n o . t t4 - ea - 14485 r e v i sio n . 2 e s t a b li s h e d : 2013 - 01 - 07 r e v i s e d : 2013 - 05 - 31
product standards mos fet SK8403160L technical data ( reference ) page vth - ta rds(on) - ta pd - ta safe operating area pd - tc 5of rth - tsw 6 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 drain-source voltage vds (v) drain current id (a) ta = 25 c, glass epoxy board (25.4 ? 25.4 ? 0.8 mm) coated with copper foil, which has more than 300 mm 2 . idp = 87 a operation in this area is limited by rds(on) 100 ms 1 s dc 1 ms 10 ms 0.1 1 10 100 1000 0.1 1 10 100 1000 pulse width tsw (s) thermal resistance rth (c / w) 0 0.5 1 1.5 2 2.5 3 0 50 100 150 temperature ta (c) total power dissipation pd (w) measureing on glass epoxy board (25.4 25.4 0.8 mm) 0 10 20 30 40 0 50 100 150 temperature tc (c) total power dissipation pd (w) 1 1.5 2 2.5 -50 0 50 100 150 temperature (c) gate-source threshold voltage vth (v) 0 2 4 6 -50 0 50 100 150 temperature (c) drain-source on-resistance rds(on) (m ? ) 4.5 v vgs = 10 v d o c n o . t t4 - ea - 14485 r e v i sio n . 2 e s t a b li s h e d : 2013 - 01 - 07 r e v i s e d : 2013 - 05 - 31
product standards mos fet SK8403160L unit: mm page 6 hsso8-f1-b ? 6of land pattern (reference) (unit : mm) 2.25 0.65 2.35 0.4 0.45 0.625 1.8 0.825 0.22 +0.10 -0.05 3.05 0.10 0.65 3.3 0.1 0 to 0.05 0.125 0.075 1.00 0.05 0.30 +0.10 -0.05 3.05 0.10 0.35 0.10 3.25 0.10 0.075 0.150 0.25 +0.10 -0.05 0.35 0.10 (7) (7) 0.100 0.075 2.23 0.10 1.63 0.10 4 5 6 7 8 3 2 1 5 4 3 2 1 6 7 8 d o c n o . t t4 - ea - 14485 r e v i sio n . 2 e s t a b li s h e d : 2013 - 01 - 07 r e v i s e d : 2013 - 05 - 31
request for your special attention and precautions in using the technical information and semiconductors described in this book (1) if any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) the technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. no license is granted in and to any intellectual property right or other right owned by panasonic corporation or any other company. therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) the products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. it is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) the products and product specifications described in this book are subject to change without notice for modification and/or im- provement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (5) when designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (esd, eos, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. when using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) this book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202
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